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FDC5661N Pinout Equivalent Circuit

1：Overview of the FDC5661N：

FDC5661N is an N-channel logic level MOSFET produced by ON Semiconductor, belonging to the PowerTrench series. The device has a drain-to-source voltage (Vds) of 60V, a continuous drain current (Id) of 4A , and an on-resistance (Rds(on)) maximum of 60mΩ at 10V/4A. It dissipates up to 1.6W of power and operates within a temperature range of -55°C to 150°C. FDC5661N is available in two package types: SOT-23-6 or TSOT-23-6.

2：FDC5661N Important pin function definition:

3.The circuit connection for FDC5661N

The G terminal of FDC5661N is connected in series with a current-limiting resistor, which then connects to the MCU control circuit. The gate is linked to an R2 pull-down circuit, the S terminal is connected to GND, and the D terminal is connected to the power supply. When the G terminal is high, FDC5661N conducts; when it is low, FDC5661N cuts off. The resistors in the image should be adjusted according to the circuit design requirements.

4：Alternative model recommendation

YJJ05N06A：YJJ05N06A is an N-channel enhancement-mode MOSFET introduced by Yangzhou Yangjie Electronic Technology Co., Ltd. It shares the same voltage rating as FDC5661N and has a continuous drain current capability of 5A. Utilizing Trench Power LV MOSFET technology, it achieves low on-state losses through high-density cell design, making it suitable for high-frequency switching applications. It comes in the same package as FDC5661N, allowing direct replacement.

G050N06LL：G050N06LL is an N-channel enhancement-mode MOSFET introduced by Shenzhen Guofeng Electronics (GOFORD). The device has a drain-to-source breakdown voltage of 60V and a continuous drain current (ID) of 5A. It comes in an SOT-23-6 package. G050N06LL is suitable for compact designs that support PD fast charging protocols. It is recommended to use copper foil for heat dissipation (such as a 2 oz copper layer) or add a heatsink to prevent the junction temperature from exceeding 150°C.

WST6045：WST6045 is an N-channel enhancement-mode MOSFET introduced by Taiwan Microsok (WINSOK). It features a drain breakdown voltage of 60V and a continuous current capability of 5A. It uses the same package form as similar models, making it suitable for direct replacement. When designing the layout, minimize the power loop path to reduce parasitic inductance.

NCE6005AN：The NCE6005AN is presumed to be an N-channel enhancement-mode MOSFET from the NCE6005 series by New Jenergy. The NCE6005AN shares the same voltage rating as the FDC5661N but has a higher continuous current capability of 5A compared to the FDC5661N. Additionally, they have the same package, allowing direct substitution in practical applications. It is suitable for power management and load driving circuits.