ES1J | Diode Datasheet, SMD Diode, Equivalent, Price HY Electronic (Cayman) Limited

ES1J Schottky Diode

At Kasuo Electronics, we are committed to providing high-quality electronic components, and our ES1J diode is no exception. Designed for effective protection and performance, the ES1J is an essential component for safeguarding your circuits against voltage spikes.

Key Features of ES1J Diode:

Typ: Schottky Rectifier

Durchlassspannung: 0.45V (max)

Reverse Current: 5 µA (max at 25°C)

Reverse Voltage: 100V

Pakettyp: DO-214AC

Betriebstemperaturbereich: -55°C to +125°C

The ES1J diode is ideal for applications such as power supplies, battery-operated devices, and protection circuits due to its low forward voltage and excellent reverse leakage characteristics.

Quality Assurance

At Kasuo Electronics, we ensure that all our components undergo rigorous quality control checks before shipment. Each ES1J diode is tested to ensure it meets the highest standards of reliability and performance. A detailed test report is available upon request, providing complete transparency about the product’s performance.

Choose Kasuo Electronics for trusted, high-quality components tailored to meet your needs.

ES1J Pinout

The ES1J diode pin assignment configuration details the connection of the cathode and anode pins in the component.

This pinout layout ensures the proper orientation and connection of the ES1J diode in electronic circuits. Correctly identifying the cathode and anode is crucial for the diode’s functionality in rectification, protection, and signal processing applications.

ES1J Diode Equivalent

This is a model replacement table for the ES1J, they are both rectifier diodes and both convert AC to DC. They are both unidirectional, so they can both have protection circuitry

Bild	Name	Macher	Reverse Recovery Time	Maximaler Strom	Maximale Spannung	Pakettyp
	ES1J	Diodes Incorporated	50 ns	1A	600 V	DO-214AC
	1N5404	ON Semiconductor	2.5µs	3A	400V	DO-201AD
	HER206	Good-Ark Electronics	500ns	2A	600 V	DO-15
	MURS160	STMicroelectronics	35 ns	1A	600 V	SMA
	P600J	ON Semiconductor	2.0µs	6A	600 V	TO-220
	US1J	Diodes Incorporated	75ns	1A	600 V	SMA

Notiz:
1. Replace with 1N5404, his reverse voltage is smaller than ES1J, if the original circuit voltage exceeds 400V, it will burn through 1N5404.
2. Replace with HER206, if the circuit requires high reverse recovery time, he is not very suitable.
3. with MURS160 replacement, the original circuit current will be too large overcurrent damage, but also should consider the MUR160 heat dissipation. 4. with P600 replacement, if the circuit voltage exceeds 400V, it will burn through the 1N5404.
4. Replace with P600, if the circuit operates at a high frequency for high reverse recovery time requirements, then he is not suitable.
5. Replacement with US1J, his parameters and packages are similar to ES1J, can be directly replaced.