2N3055 Transistor | Hoja de datos | Circuito amplificador | Equivalent Solid State Inc.

2N3055 Equivalent

1: Overview of the 2N3055：

The 2N3055 is a commonly used NPN transistor, primarily employed in electronic circuits to handle high-power applications. The VCEO of the 2N3055 can reach approximately 60V, and it allows a maximum collector current of 15A, enabling it to drive relatively large current loads. During operation, proper heat dissipation must be designed for the 2N3055; under suitable conditions, its output power can reach about 115W. The 2N3055 is often used in audio power amplifiers or motor control circuits.
Special note: When using 2N3055, appropriate cooling measures must be considered in the circuit design to ensure its normal operation and reliability, and to ensure that the circuit parameters are within their rated range.

2: Alternative model recommendation

2N5671:

2N5671 is a high-power silicon transistor of NPN type, which can withstand the collector current of 30A and the collector-emitter voltage of 90V, and has strong power processing capacity. The package of 2N5671 is the same as that of 2N3055, and can directly replace 2N3055 in some applications with large current.

2N5878:

2N5878 and 2N3055 use the same TO-3 package. The 2N5878 is an NPN silicon power bipolar transistor with a maximum collector current of 10A, a maximum collector-emitter voltage of 80V, and a dissipation power of 150W. The collector current of the 2N5878 is weaker than that of the 2N3055, making it suitable as a substitute in applications where the current does not exceed 10A.

BD130:

BD130 uses a TO-3 packaged NPN power transistor with a collector-emitter voltage rating of 60V and a collector current capability of up to 15A. Thanks to its excellent power handling and good heat dissipation, it is commonly used in audio power amplification, motor drives, and linear regulated power supplies. The main parameters of BD130 and 2N3055 are quite similar, making them suitable as alternatives to 2N3055 in the same application scenarios.

2N3055T3BL:

The 2N3055T3BL is an NPN silicon power transistor. The maximum collector-emitter breakdown voltage (VCEO) of the 2N3055T3BL is 60V, with a maximum collector current (IC) of 15A and a power dissipation of 115W. It can operate over a temperature range of-65℃ to 150℃. The 2N3055T3BL uses a TO-3 package and is primarily used for general switching and amplifier applications, such as audio power amplification, motor drives, linear regulators, and inverters. In some applications, it can replace the 2N3055