If you’re looking for alternatives to the C3M0016120K, here are a few solid options. Infineon’s IMW120R030M1H is a good general choice—slightly higher R_DS(on), but reliable switching performance. onsemi’s UF3SC120016K4S closely matches the original, nearly drop-in compatible. Wolfspeed’s own C3M0032120K has higher resistance, increasing losses slightly but costs less—good if budget is tight. Whichever you pick, double-check losses, gate-driver compatibility, and thermal design to ensure stable performance.
C3M0016120K | Datasheet, Price & PDF Wolfspeed, Inc.
Explore the Reference manual for C3M0016120K, providing essential details on its electrical characteristics and performance. Access the PDF for complete specifications and find pricing and availability from trusted suppliers.
- Tipo de FET: Canal N
- Voltaje de drenaje a fuente (Vdss): 1200 voltios
- Drenaje continuo de corriente (Id) a 25 °C: 115A (Tc)
- Paquete: TO-247-4L

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c3m0016120k
If you’re looking for a reliable high-voltage MOSFET, Wolfspeed’s C3M0016120K SiC MOSFET is a solid choice. It handles up to 1200V, ideal for industrial power supplies, solar inverters, or EV chargers. Its super-low R_DS(on) of just 16 mΩ means less power loss compared to traditional silicon MOSFETs. Plus, it switches extremely fast for efficient, high-frequency operations. The TO-247-4L package with a Kelvin source pin reduces noise, and it’s rated up to 41A with excellent high-temperature stability.
c3m0016120k pinout and package
The C3M0016120K MOSFET you’re using has a TO-247-4L package. Unlike regular three-pin MOSFETs, it includes an extra Kelvin source pin (Sₖ). This pin provides a separate, clean ground reference for your gate driver, reducing switching noise caused by high currents. Connect your gate driver ground to Sₖ and keep main current loops tied to the main source pin (S). Keep the driver lines short, especially the Kelvin connection, away from heavy currents. Also, the exposed pad needs proper insulation and should be screwed onto a heatsink for best thermal performance.
c3m0016120k equivalent sic mosfet
Parámetro/Modelo | C3M0016120K | IMW120R030M1H | UF3SC120016K4S | C3M0032120K |
---|---|---|---|---|
Fabricante | Wolfspeed | Infineon | onsemi | Wolfspeed |
Paquete | TO-247-4L | TO-247-4 Kelvin source | TO-247-4L | TO-247-4L |
Max Voltage (VDS) | 1200V | 1200V | 1200V | 1200V |
RDS(encendido) @25°C | 16 mΩ | 30 mΩ | 16 mΩ | 32 mΩ |
Max Continuous Current (25°C) | 41 A | 41 A | 40 A | 36 A |
Supports Kelvin Source | ✔ Supported | ✔ Supported | ✔ Supported | ✔ Supported |
Switching Speed | Very fast (SiC standard) | Fast (optimized for PFC) | Fast | Fast |
Observaciones | Ultra-low RDS(encendido) | Moderate RDS(encendido) | Same-level replacement | Higher power, cost-effective alternative |
c3m0016120k gate driver circuit
This circuit works by first using the input DC voltage (V<sub>DC</sub>) to power the system, and then the capacitor (C<sub>DC</sub>) smooths the power, reducing high-frequency noise. The gate driver passes the input signal to the MOSFET, controlling its switching. You’ll notice the gate-source voltage (V<sub>GS</sub>) is -4V, which is used to turn off the MOSFET. The gate resistor (RG) limits the gate current to avoid overheating. Keep in mind that SiC MOSFETs usually require a higher gate voltage, typically around 15V, to turn on.
c3m0016120k high frequency inverter design
If you’re planning to use the C3M0016120K for a high-frequency inverter, it’s a great choice. Its low R_DS(on) and fast switching capabilities make it perfect for efficient, low-loss designs. Pick a switching frequency between 20–100 kHz for good balance of efficiency and size. For gate drive, consider using an IR2110 or a SiC-specific driver for fast, precise control. Don’t forget to add LC filters to smooth the output. Also, heat management is crucial—SiC MOSFETs generate heat, so ensure a solid cooling system for stable, efficient performance
c3m0016120k sic power module integration
If you’re designing a SiC power module, C3M0016120K is a great choice. Its low R_DS(on) and fast switching are perfect for high-frequency, high-efficiency power conversion. You can integrate it with SiC diodes, gate drivers, and a power management unit for a compact, efficient module. For packaging, TO-247-4L or TO-263 will help with heat dissipation. Don’t forget to include a cooling system, like liquid or air cooling, for temperature management. Also, ensure you add temperature protection and EMI suppression to keep the module stable.
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