IRF450 | Datasheet | Equivalent | Price
- Tipo de FET: Canal N
- Voltaje de drenaje a fuente (Vdss): 500 voltios
- Drenaje continuo de corriente (Id) a 25 °C: 12A (Tc)
- Paquete: TO-204AA (TO-3)

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[SGeC] IRFP450 High Voltage N-Channel MOSFET 500V-14A-190W
IRF450 Pinout Equivalent
irf450 pinout Picture
IRF450 is a very commonly used N-channel MOSFET, because of its excellent performance is widely used in high-power high-frequency switching circuit, motor drive and protection circuit; Following this article, we will introduce the IRF450 pin function, important basic parameters, and alternative models in detail to help readers better understand and use the device.
IRF450 Basic parameters:
Type: N channel MOSFET;
The maximum voltage is (VDS) : 500V;
The maximum current flowing sustainably is (ID):12A;
The on-resistance is (RDS(on)) : 0.4 ohms;
The on-voltage is (VGS(th)) : 2~4V;
Encapsulation: TO-204AA;
Pin Function Table:
Alfiler | Símbolo | Descripción |
---|---|---|
1 | Puerta | The input is connected to the signal port, which controls the switching of the transistor |
2 | Drenar | Connect the load and current flows into the pin |
3 | Fuente | For connecting ground, current flows out of the pin |
Replacement Product Model List:
Imagen | Nombre | Tipo | Vdss | Vgs(th) | Identificación | Pd | Paquete |
---|---|---|---|---|---|---|---|
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IRFP450PBF | N-MOSFET | 500 V | 4 V | 14A | 190W | TO-247AC-3 |
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IRFP450-HXY | N-MOSFET | 500 V | 4 V | 14A | 190W | TO-247S |
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RS25N50W | N-MOSFET | 500 V | 3 V | 25A | 190W | TO-247 |
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HIRFP450APBF | N-MOSFET | 500 V | 2 V | 14A | 190W | TO-247S |
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STP20NK50ZSTP20NK50Z | N-MOSFET | 500 V | 4,5 V | 17A | 190W | TO-220 |
Precautions for use:
Gate drive voltage: Be careful not to exceed the rated voltage too much, otherwise the MOS will be damaged, up to 20V without damage; In general, we also connect a diode to the grid to prevent reverse breakdown;
Heat dissipation: the power of this MOSFET can be up to 190W, so if the heat dissipation is not done well, there will be a great probability of damage to the entire circuit;
PCB layout: In the design of PCB, it is necessary to consider the parasitic inductance of the grid drive circuit, which can improve the switching speed and reduce the switching loss;