IRF740 | Datasheet | Circuit | Equivalent STMicroelectronics

[SGeC] IRF740 N-Channel MOSFET 400V-10A

IRF740 Pinout Equivalent

irf740 pinout Picture

IRF740 is an N-channel MOSFET that electronic engineers often see. Its main advantage is that it can withstand high voltage and high current, so it is widely used in DCDC circuit, inverter circuit and high frequency switching circuit. Learning the pin parameters and electrical characteristics of the transistor is of great benefit to circuit design and development. This paper will explain the electrical parameters of IRF740, pin definition and alternative models in detail.
The pin of IRF740 adopts TO-220 package, which is a more common package form of high-power MOSFFET tube. Pin specific functions are as follows:

Important basic parameters of IRF740:
Type: N channel MOSFET;
The maximum voltage is (VDS) : 400V;
The maximum current flowing sustainably is (ID):10A (decreases with rising temperature, minimum 6.3A);
The on-resistance is (RDS(on)) : 0.55 ohMs;
The on-voltage is (VGS(th)) : 2~4V;
Maximum power (PD) : 125W;

IRF740 alternative product model list:

Imagen	Nombre	Tipo	Vdss	Vgs (th)	Identificación	Pd	Paquete
	IRF740ASPBF	N-MOSFET	400V	4 V	10A	125W	D2PAK
	SMT10N60	N-MOSFET	600 V	2 V	10A	140 W	TO-220F-3
	KNF6650A	N-MOSFET	500 V	2 V	10A	140 W	TO-220F-3
	STP26NM60N	N-MOSFET	600 V	2 V	20A	140 W	TO-220
	WGP12N60S	N-MOSFET	600 V	4 V	12A	140 W	TO-220

Nota:

When choosing a replacement model should pay attention to ensure that the maximum voltage and current values and power are consistent with the previous MOSFET tube (greater than or equal to the previous parameters); if the product has been mass-produced want to go to choose a replacement model, it must require the same package can be.
In the selection of application scenarios, it is necessary to consider whether the scene is large current or large voltage. If it is a large voltage scene, IRF840 may be a better choice. In the production process should also take into account the cost of the problem. Heat dissipation must be considered in high power applications.