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IPB80N04S2-H4
IPB80N04S2-H4

IPB80N04S2-H4 | Datasheet | Price | PDF

The IPB80N04S2-H4 is a high-performance power MOSFET. For detailed specifications, including the Reference manual and technical information, explore the available PDF. Find useful insights about the device’s price, features, and application notes to support your design and decision-making process. Get comprehensive details in a concise and accessible format.
Brands: Infineon Technologies
Download: IPB80N04S2-H4 Datasheet PDF
Price: inquiry
In Stock: 4,748
FET Type: N-Channel
Drainto Source Voltage(Vdss): 40 V
Current-Continuous Drain(Id)@25°C: 80A (Tc)
Package: PG-TO263-3-2
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