एमजेई3055टी Transistor | Circuit Diagram, Equivalent, Application & Datasheet STMicroelectronics

MJE3055T Transistor Complete Guide | Working Principle | Equivalent Transistors and Advantages

MJE3055T Circuit Diagram

The MJE3055T is a silicon epitaxial base NPN transistor in a TO-220 package. It is used in power switching circuits and general purpose amplifiers. The complementary PNP type is the MJE2955T. The following diagrams show the internal structure of the MJE2955T in PNP and the MJE3055T in NPN, respectively.

MJE3055T Pinout Diagram

Detailed description of the parameter MJE3055T:

Polarity: NPN;
PCN (mw) power: 2Wlc (mA);
Current: 10A;.
BVCBO(V) Collector-Base Voltage: 70V;.
BVCEO(V) Collector-Emitter Voltage: 60V;
BVEBO(V) emitter-base voltage: 5V.
hFE (min) Minimum amplification: 20.
hFE(max) Maximum amplification: 100.
Below is a simple MJE3055T drive LED circuit where the transistor conducts when a large enough voltage is received at the base of the MJE3055T. After the transistor conducts, current flows from the power supply (3.3V) through LED1, the collector and emitter of the MJE3055T, causing the LED to light up.
Since the MJE3055T is a silicon transistor, it requires an on-state voltage of 0.7 V. If it were a germanium transistor, the on-state voltage would only be 0.2 to 0.3 V. The MJE3055T is a silicon transistor, so it requires an on-state voltage of 0.3 V.

MJE3055T Circuit Diagram

Silicon and Germanium Transistors Comparison Summary