SI6562CDQ-T1-GE3 | Datasheet | Price | PDF Vishay Siliconix
Explore the Reference manual for the SI6562CDQ-T1-GE3 for detailed insights into its features and technical specifications. Access the PDF version for easy reference and stay informed about the latest price updates for this high-performance component.
- FET Type: N and P-Channel
- Drainto Source Voltage(Vdss): 20V
- Current-Continuous Drain(Id)@25°C: 6.7A, 6.1A
- Package: 8-TSSOP (0.173, 4.40mm Width)

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