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IRF3808PBF | Datasheet | PDF Infineon Technologies

Discover the IRF3808PBF from Infineon, along with its Reference manual, key specifications, and performance details. Explore its applications in power management and get access to its full datasheet. Find out about its availability through Future Electronics and how it can enhance your designs.

Brands: Infineon Technologies

Download: IRF3808PBF Datasheet PDF

Price: inquiry

In Stock: 206

FET Type: N-Channel

Drainto Source Voltage(Vdss): 75 V

Current-Continuous Drain(Id)@25°C: 140A (Tc)

Package: TO-220AB

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IRF3808 MOSFET Overview

The IRF3808 is a high-performance N-channel power MOSFET made by Infineon. It comes in a TO-220AB package and is used in power management and control applications requiring high current and efficiency. With its low on-resistance, this MOSFET handles large currents, making it ideal for motor drives, switch-mode power supplies, and inverters.

Key Features:

Drain-Source Voltage (V_DSS): 75V
Maximum Continuous Drain Current (I_D): 140A (at 25°C)

R_DS(on) (On-state Resistance): Typical value 5.9 mΩ, Maximum value 7.0 mΩ (V_GS=10V, I_D=82A)

Pulse Drain Current (I_DM): 550A (maximum)

Gate Charge (Q_g): Typical value 150 nC, Maximum value 220 nC

Package Type: TO-220AB

Operating Junction Temperature: -55°C to +175°C

Maximum Gate-Source Voltage (V_GS): ±20V

High-frequency switching capability, with low switching losses.

Applications:

Power Management Systems: Suitable for efficient switch-mode power supplies, DC-DC converters, UPS, and more.

Motor Drives: Applications in DC motor drivers, variable frequency drives, and servo drives.

Automotive Electronics: Used in automotive battery management systems, integrated starter alternators (ISA), etc.

Solar Inverters: High-efficiency inverter designs for renewable energy systems.

IRF3808 PINOUT

Pin Number	Pin Name	Description
1	Gate (G)	Gate: Controls MOSFET switching (connect to gate driver circuit)
2	Drain (D)	Drain: Connects to load (current flows Drain → Source when on)
3	Source (S)	Source: Typically connected to ground or current return

When working with this MOSFET, make sure the gate voltage (VGS) stays within ±20V — going over that can easily damageit.

For the drain-source voltage (VDSS), keep it under75V, and don’t let the current go beyond140A. It might seem fine at first, butpushing those limits will shorten its life or cause it to fail altogether.

Beforepowering anything up, always take a second to double-check the pinorientation. It’s a small step, but getting it wrong can lead tobig problems.

And one more tip — the gate is sensitive to staticEven a little Ecan cause issues, so it’s worth grounding yourself or using protection when handling it.

IRF3808 Equivalent

IRF3808 Equivalent Pinout

Model	Package	V_DSS	I_D	R_DS(on)	Features
IRFB3077	TO-220AB	75V	160A	4.5 mΩ	Low conduction, suitable for high current applications
IRFB3207	TO-220AB	75V	180A	3.3 mΩ	Lower conduction resistance, suitable for high-efficiency power design
IRFB4110	TO-220AB	100V	120A	4.5 mΩ	Higher voltage tolerance, suitable for higher voltage applications
IRFB4310	TO-220AB	100V	130A	3.6 mΩ	Suitable for high current and high voltage power applications
IRF2907Z	TO-220AB	75V	209A	3.3 mΩ	Excellent current handling capability, suitable for high load applications

Selection Advice

Voltage: The VDS rating of the replacement model must be higher than the original to avoid breakdown.
Current: The IDON of the replacement model must be greater than the original to prevent overheating.
RDS(on): The RDS(on) should be smaller than the original, or the power consumption will increase.
Package: The package and pinout must be the same as the original, or it won’t work.

IRF3808PBF | Datasheet | PDF Infineon Technologies