MMBT5551LT1G | Datasheet | Price | PDF onsemi
Access the Reference manual for MMBT5551LT1G, providing all the technical specifications and details you need. Explore its datasheet, including electrical characteristics and performance data, to ensure it meets your design requirements.
- Transistor Type: NPN
- Current-Collector(Ic)(Max): 600 mA
- Voltage-Collector Emitter Breakdown (Max): 160 V
- Package: TO-236-3, SC-59, SOT-23-3

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