SI2319CDS-T1-GE3 | Vishay Vishay Siliconix
Find the SI2319CDS-T1-GE3 with detailed technical specifications in the Reference manual. Ideal for those needing reliable and efficient performance for various applications. This component ensures quality and precision in every use.
- FET Type: P-Channel
- Drainto Source Voltage(Vdss): 40 V
- Current-Continuous Drain(Id)@25°C: 4.4A (Tc)
- Package: SOT-23-3 (TO-236)

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