ИРФ450 | Datasheet | Equivalent | Price

[SGeC] IRFP450 High Voltage N-Channel MOSFET 500V-14A-190W

IRF450 Pinout Equivalent

irf450 pinout Picture

IRF450 is a very commonly used N-channel MOSFET, because of its excellent performance is widely used in high-power high-frequency switching circuit, motor drive and protection circuit; Following this article, we will introduce the IRF450 pin function, important basic parameters, and alternative models in detail to help readers better understand and use the device.
IRF450 Basic parameters:
Тип: N-канальный МОП-транзистор;
The maximum voltage is (VDS) : 500V;
The maximum current flowing sustainably is (ID):12A;
The on-resistance is (RDS(on)) : 0.4 ohms;
Напряжение включения (VGS(th)) : 2~4 В;
Encapsulation: TO-204AA;
Pin Function Table:

Replacement Product Model List:

Картина	Имя	Тип	Вдсс	Vgs(th)	Идентификатор	Пд	Упаковка
	IRFP450PBF	N-МОП-транзистор	500В	4В	14A	190W	ТО-247АС-3
	IRFP450-HXY	N-МОП-транзистор	500В	4В	14A	190W	TO-247S
	RS25N50W	N-МОП-транзистор	500В	3В	25А	190W	ТО-247
	HIRFP450APBF	N-МОП-транзистор	500В	2В	14A	190W	TO-247S
	STP20NK50ZSTP20NK50Z	N-МОП-транзистор	500В	4,5 В	17A	190W	ТО-220

Precautions for use:

Gate drive voltage: Be careful not to exceed the rated voltage too much, otherwise the MOS will be damaged, up to 20V without damage; In general, we also connect a diode to the grid to prevent reverse breakdown;
Heat dissipation: the power of this MOSFET can be up to 190W, so if the heat dissipation is not done well, there will be a great probability of damage to the entire circuit;
PCB layout: In the design of PCB, it is necessary to consider the parasitic inductance of the grid drive circuit, which can improve the switching speed and reduce the switching loss;