IRFP450 | Datasheet, Equivalent, Pinout, Amplifier Circuit STMicroelectronics
- Тип полевого транзистора: N-канал
- Напряжение сток-исток (Vdss): 500 В
- Ток непрерывного стока (Id) при 25°C: 14А (Тс)
- Упаковка: ТО-247-3

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[SGeC] IRFP450 High Voltage N-Channel MOSFET 500V-14A-190W
IRFP450 Pinout
irfp450 pinout Picture
irfp450 is a power field effect tube, with a high voltage (maximum can withstand 500V); high current (maximum can withstand the on-state current of 16A); on-resistance is small (about 0.55 ohms, small resistance means that the work of the energy loss is low); switching time is short (indicating that the power of the switching performance of the power field effect tube is good); wide operating temperature (-55 to 70 degrees Celsius, can meet); mainly used in high-frequency power supply circuits and DCDC conversion circuits and power amplifier circuits. Wide operating temperature (-55 to 70 degrees Celsius, can meet most of the use of the environment); mainly used in high-frequency power supply circuits, DCDC conversion circuits, and power amplifier circuits used. The most important thing to consider when using is whether it is working within the safe current and safe voltage, and good heat dissipation measures.
Определения выводов показаны ниже:
Приколоть | Символ | Описание |
---|---|---|
1 | Ворота | Also known as the gate, it controls the on-off of the field effect tube |
2 | Осушать | Used to connect to power supply, current inflow pin |
3 | Источник | Connect Load, Current Flow Pin |
IRFP450 Equivalent
The irfp450 is an N-channel MOSFET in the TO-247AC-3 package that is often used in circuit design for high frequency switching, high voltage DCDC circuits and high frequency amplifiers. The main parameters include -, the maximum rated voltage of 500V, ultra-high voltage allows irfp450 used in most common circuits; rated current in the typical state of 14A (at a temperature of 25 degrees Celsius), when the temperature rises to 100 degrees Celsius can still be maintained in the 8.7A current, indicating that the current will be reduced with the temperature rise, but the magnitude of the reduction will not be very large, showing that the excellent temperature drift of the tube. Out of the excellent temperature drift characteristics of the tube (with the change in temperature, the performance of the change is low); on-resistance of 0.55 ohm, lower on-resistance makes the transistor in the work of the time to do less useless work, there is a higher efficiency; switching time for the 55ns and 135ns (on for 55, off for 135), lower switching time makes the transistor can be applied to high-frequency switching circuits. Since irfp450 can operate at high power, this makes us to main the temperature of the transistor, high power means high heat generation, high heat generation will reduce the performance of the tube, so we have to pay attention to the heat dissipation in the circuit design, you can external thermal pads or coated with thermally conductive silicone grease.
Irfp450 Replaceable Chip Table
Имя | Тип | Вдсс | Вгс | Пд | Упаковка |
---|---|---|---|---|---|
TK15J50D(F) | N-МОП-транзистор | 500В | 4В | 210W | SC-65 |
CMA16N50 | N-МОП-транзистор | 500В | 2В | 200 Вт | ТО-3П |
CMD40N20 | N-МОП-транзистор | 500В | 4В | 300 Вт | Д2ПАК |
IPD50R280CEAUMA1 | N-МОП-транзистор | 500В | 3В | 119W | ТО-252-2 |
AGM15T16D | N-МОП-транзистор | 500В | 4В | 240W | ТО-3П |
TK15J50D(F) Picture
CMA16N50 Picture
CMD40N20 Picture
IPD50R280CEAUMA1 Picture
AGM15T16D Picture