ММБТ3906 Transistor | Pinout | Equivalent | Datasheet MDD

MMBT3906 Pinout

MMBT3906 Pinout Diagram

The mmbt3906 is a PNP type switching transistor that can be paired with the NPN complementary device MMBT3904. It supports a maximum reverse voltage of 40V, a maximum continuous collector current of 200Ma, and an extremely fast switching speed (ton/toff < 50ns), and supports operating temperatures from -55°C to 150°C. The mmbt3906 can be used in LED drivers, switching circuits, and power management applications. Mainly used in LED drivers, switching circuits, power management and other scenarios.
Design circuit should be noted that, if used as a switching circuit, the base must be connected in series with a current-limiting resistor (size according to your input voltage, generally 1-10kΩ can be) to limit the base current, in order to prevent breakdown of the circuit. Alternative components are: 2N3906 (TO-92 inline package), BC856 (lower noise relative to mmbt3906).

MMBT3906 Equivalent

The MMBT3906 is a popular PNP transistor with a maximum collector-emitter voltage (Vce) of 40 V and a maximum collector current (Ic) of 200 mA.There are several equivalent transistors that can be used as replacements for the MMBT3906.These replacements have similar electrical characteristics such as comparable Vce and Ic ratings. Some common equivalent transistors include:

Картина	Номер детали	Производитель	Тип	Ряд	Vce (V)	Ic (A)
	ММБТ3906	МДД	PNP Transistor	СОТ-23	40	0.2
	2N3906	ON Полупроводник	PNP Transistor	ТО-92	40	0.2
	BC558	Филипс	PNP Transistor	ТО-92	40	0.1
	S8050	Sanken Electric	PNP Transistor	ТО-92	40	0.5
	KSA1015	Фэрчайлд	PNP Transistor	ТО-92	50	0.15
	C1815	ON Полупроводник	PNP Transistor	ТО-92	50	0.15
	2N2907	ON Полупроводник	PNP Transistor	ТО-92	40	0.6

When selecting an equivalent for MMBT3906, it is essential to match key parameters like Vce, Ic, and package type to ensure compatibility. Additionally, consider any specific application requirements, such as switching speed, power dissipation, or thermal performance, as these factors can impact the overall performance of the replacement transistor in the circuit.