IR2110S datasheet, gate driver, application note, circuit

Discover the IR2110S Reference Manual for comprehensive insights into this versatile gate driver. Explore detailed information on IR2110S circuit diagrams, application notes, pinout, schematic, and SPICE models. Enhance your designs with IR2110S inverter circuits, class D amplifier circuits, and H bridge circuits.

品牌：英飛凌科技

下載： IR2110S Datasheet PDF

價格：過時的

有存貨： 26,200

驅動配置：半橋

頻道類型：獨立的

門類型： IGBT、N通道MOSFET

包裹： 16-SOIC（0.295，7.50mm寬）

訂單滿 HK$250.00 即可享有免運

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IR2110 Pinout Equivalent

ir2110 pinout 1

1: Overview of the IR2110:

IR2110 is developed by International Rectifier Corporation of the United States using high-voltage integrated circuit and latch-free CMOS technology. It is a special gate drive integrated circuit for high-power MOSFET and IGBT with characteristics such as small size, high integration, fast response, high offset voltage and strong driving ability, and is widely used in the field of power drive.

2: IR2110 Important pin function definition:

密碼	引腳名稱	描述
針腳1	LO	Low-side output, connected to the gate of the low-side power switch tube.
針腳2	COM	COM, which is the common terminal, is the power ground.
針3	Vcc	Power pin
Pin4, 8, 14	NC	Open end, not connected to any function
Pin5	Vs	Power supply offset voltage pin
針6	VB	Voltage feedback pin
針7	HO	High-end output, connected to the gate of the high-end power switching transistor.
針9	電源電壓	Logic power supply voltage
Pin10	HIN	High-level logical input
Pin11	SD	When this pin is connected to a high voltage, the IR2110’s output signal is completely blocked.
Pin12	LIN	Low-level logical input
Pin13	Vss	Logic circuit ground potential terminal

3: Alternative model recommendation

SLM2110CG：Shu Ming Semiconductor’s product is a high-voltage, high-speed power MOSFET and IGBT driver. Its high-side floating voltage VB is 625V, higher than the 525V of IR2110S, offering greater voltage endurance and a wider design margin, which enhances device safety.
SLM2110CG 1
ID7S625：The high-voltage half-bridge driver chip of Chipown is a high-voltage and high-speed power MOSFET and IGBT gate driver based on P substrate and P epitaxy. Its floating ground channel can work under a high voltage of 600V and can drive an N-channel power MOSFET or IGBT half-bridge topology structure.
ID7S625 1
EG2113D：Yiqingwei’s high-power MOSFETs and IGBT gate driver dedicated chips feature integrated circuits specifically designed for brushless motor controller drive circuits. They support high-end operating voltages up to 600V.
EG2113D 1
IRS2308： IRS2308 is a high-voltage, high-speed power MOSFET and IGBT driver IC introduced by Infineon Technologies. It can drive up to 600V N-channel power MOSFETs or IGBTs, featuring fast switching characteristics and short propagation delays, enabling efficient power conversion and enhancing system operating frequency and efficiency. It is compatible with standard CMOS or LSTTL output logic levels of 3.3V, 5V, and 15V, making it easy to interface with various control circuits. It is widely used in industrial motor drives, inverters, servo drivers, and other equipment, providing reliable drive signals for power devices to ensure stable operation of industrial machinery.
IRS2308 1