SI2307CDS-T1-GE3 | Datasheet | PDF | Circuit
Get the SI2307CDS-T1-GE3Reference manual for comprehensive details on its specifications, applications, and performance. This MOSFET model is ideal for low power and efficient switching. Find the SI2307CDS-T1-GE3 in PDF format, including circuit diagrams, and explore its potential in various designs and projects.
- 場效電晶體類型: P溝道
- 漏源電壓(Vdss): 30伏
- 持續漏極電流(Id)@25°C: 3.5A (Tc)
- 包裹: SOT-23-3(TO-236)

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